The control of the electron spin by external means is a key issue for spintronic devices. We demonstrate for the first time operando electrostatic spin manipulation due to ferroelectric polarization reversal in ferroelectric Rashba semiconductors α-GeTe and multiferroic Ge1−xMnxTe.

Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors, J. Krempaský, S. Muff, J. Minár, N. Pilet, M. Fanciulli, A. P. Weber, E. B. Guedes, M. Caputo, E. Müller, V. V. Volobuev, M. Gmitra, C. A. F. Vaz, V. Scagnoli, G. Springholz, and J. H. Dil

Phys. Rev. X 8, 021067 (2018)
DOI: 10.1103/PhysRevX.8.021067