The control of the electron spin by external means is a key issue for spintronic devices. We demonstrate for the first time operando electrostatic spin manipulation due to ferroelectric polarization reversal in ferroelectric Rashba semiconductors α-GeTe and multiferroic Ge1−xMnxTe. Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors, J. Krempaský, S. Muff, J. Minár, N. Pilet, M. Fanciulli, A. P. Weber, E. B.…