Proximitized materials made of graphene and transition-metal dichalcogenides
Martin Gmitra
Department of Theoretical Physics and Astrophysics
Graphene on transition-metal dichalcogenides exhibits proximity spin-orbit effects opening new venues for optospintronics [1], and provides route for exploring robust helical edge states [2, 3]. Some of the transition-metal dichalcogenides showing metal-insulator transition and the sequence of different charge density wave (CDW) transformations [4]. In such a case a fascinating finding is observed namely that induced proximity effects in graphene are significantly influenced by the presence of the commensurate charge density wave. We present our first-principles results for the electronic band structures and discuss relevant orbital and spin-orbital proximity effects by means of phenomenological symmetry-based Hamiltonians.
The work is supported by the VVGS-2019-1227.
[1] M. Gmitra, J. Fabian, Phys. Rev. B 92, 155403 (2015).[2] M. Gmitra, D. Kochan, P. Hoegl, J. Fabian, Phys. Rev. B 93, 155104 (2016).
[3] T. Frank et al., Phys. Rev. Lett. 120, 156402 (2018).
[4] I. Lutsyk et al., Phys. Rev. B. 98, 195425 (2018).